Ionizing Radiation Effects in MOS Devices and Circuits

Ionizing Radiation Effects in MOS Devices and Circuits

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The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.A. R. Knudson and A. B. Campbell, aquot;Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits, aquot; IEEE Trans. Nucl. Sci. NS-28, 4017- 4021 (1981). 167. John A. Zoutendyk. aquot;Modeling of Single Event Upset in Bipolar Integratedanbsp;...

Title:Ionizing Radiation Effects in MOS Devices and Circuits
Author: T. P. Ma, Paul V. Dressendorfer
Publisher:John Wiley & Sons - 1989-04-18

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